savantic semiconductor product specification silicon pnp power transistors 2SB1366 d escription with to-220f package complement to type 2sd2058 low collector saturation voltage: v ce(sat) =-1.0v(max) at i c =-2a,i b =-0.2a collector power dissipation: p c =25w(t c =25 ) applications with general purpose applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i b base current -0.5 a t a =25 2.0 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1366 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 v v be base-emitter on voltage i c =-0.5a;v ce =-5v -1.0 v i cbo collector cut-off current v cb =-60v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 ma h fe-1 dc current gain i c =-0.5a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 9.0 mhz c ob collector output capacitance f=1mhz;v cb =-10v 150 pf switching times t on turn-on time 0.4 s t s storage time 1.7 s t f fall time i c =-2.0a i b1 =-i b2 =-0.2a v cc =-30v ,r l =15 d 0.5 s h fe-1 classifications o y 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1366 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SB1366
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